Integration of Novel High-Frequency Transformer With Silicon-Carbide Schottky Diodes

Graphene-silicon Schottky diodes.

We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...

Boron carbide/n-silicon carbide heterojunction diodes

Converter Using Silicon Carbide Schottky Diode

Silicon carbide (SiC) is the perfect cross between silicon and diamond. The crystal lattice of SiC is identical to silicon and diamond, but, exactly half the lattice sites are occupied by silicon atoms and half by carbon atoms. Like-diamond siC has electronic properties superior to silicon, but, unlike diamond it is also manufacturable. The thermal leakage current (dark current) in SiC is sixte...

Benefits of Silicon Carbide Schottky Diodes in Boost APFC Operating in CCM

Boost derived Active Power Factor Correction (APFC) imposes high stress on the main diode and main switch due to the high reverse voltage which may result in a very high reverse current. This study analyses the engineering requirements of the diode and transistor in APFC applications and compares a design that uses a fast silicon diode plus lossless snubber to a design with a Silicon Carbide (S...

Junction investigation of graphene/silicon Schottky diodes

Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed bet...